^e.mi-conduMJ10000 darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. it is particularly suited for line operated switchmode applications such as: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits 100c performance specified for: reversed biased soa with inductive loads switching times with inductive loads ? 210 ns inductive fall time (typ) saturation voltages leakage currents MJ10000 20 ampere npn silicon power darlington transistors 350 volts 175 watts (to-3) maximum ratings rating collector-emitter voltage collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous ? peak(1) base current ? continuous ? peak(1) total power dissipation @ tc = 25c @tc=100c derate above 25 c operating and storage junction temperature range symbol vceo vcex vcev veb "c 'cm ib !bm pd tj. tstg value 350 400 450 8 20 30 2.5 5 175 100 1 -65 to +200 unit vdc vdc vdc vdc adc adc watts w/c c thermal characteristics characteristic thermal resistance, junction to case maximum lead temperature for soldering purposes: 1/8" from case for 5 seconds symbol rojc tl max 1 275 unit c/w c (1) pulse test: pulse width = 5 ms, duty cycle 10%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mj100oo electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics (2) collector-emitter sustaining voltage (table 1) (ic = 250 ma, ib = 0, vdamp = rated vceo> MJ10000 collector-emitter sustaining voltage (table 1, figure 12) ic = 2 a, vc|arnp = rated vcex. tc = 100c MJ10000 ic = 10 a, vc|amp = rated vcex. tc = 100c MJ10000 collector cutoff current (vcev = rated value, vbe(off) = 1-5 vdc) (vcev = ra'ed value, vbe(off) = 1 -5 vdc. tc = 150c) collector cutoff current |
